tm february 2007 FDMS5672 n-channel ultrafet trench ? mosfet ?2006 fairchild semiconductor corporation FDMS5672 rev.c1 www.fairchildsemi.com 1 FDMS5672 n-channel ultrafet trench ? mosfet 60v, 22a, 11.5m ? features ? max r ds(on) = 11.5m ? at v gs = 10v, i d = 10.6a ? max r ds(on) = 16.5m ? at v gs = 6v, i d = 8a ? typ qg = 32nc at v gs = 10v ? low miller charge ? optimized efficiency at high frequencies ? rohs compliant general description uitrafet devices combine c haracteristics that enable benchmark efficiency in power conversion applications. optimized for r ds(on) , low esr, low total and miller gate charge, these devices are ideal for hi gh frequency dc to dc converters. application ? dc - dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 60 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25c 22 a -continuous (silicon limited) t c = 25c 65 -continuous t a = 25c (note 1a) 10.6 -pulsed 60 p d power dissipation t c = 25c 78 w power dissipation t a = 25c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.6 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS5672 FDMS5672 power 56 13?? 12mm 3000 units g s s s pin 1 power 56 (bottom view) d d d d 4 3 2 1 5 6 7 8 g s s s d d d d
FDMS5672 n-channel ultrafet trench ? mosfet FDMS5672 rev.c1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 60 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 59 mv/ c i dss zero gate voltage drain current v ds = 48v, v gs = 0v 1 p a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 2 3.2 4 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -11 mv/ c r ds(on) drain to source on resistance v gs = 10v, i d = 10.6a 9.4 11.5 m : v gs = 6v, i d = 8a 13.0 16.5 v gs = 10v, i d = 10.6a, t j = 125 c 15.0 18.0 g fs forward transconductance v ds = 10v, i d = 10.6a 26 s dynamic characteristics c iss input capacitance v ds = 30v, v gs = 0v, f = 1mhz 2100 2800 pf c oss output capacitance 375 500 pf c rss reverse transfer capacitance 120 180 pf r g gate resistance f = 1mhz 1.2 : switching characteristics t d(on) turn-on delay time v dd = 30v, i d = 10.6a v gs = 10v, r gen = 6 : 16 29 ns t r rise time 17 31 ns t d(off) turn-off delay time 22 35 ns t f fall time 8 16 ns q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 30v i d = 10.6a 32 45 nc q gs gate to source gate charge 10 nc q gd gate to drain ?miller? charge 8.3 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 10.6a (note 2) 0.80 1.20 v t rr reverse recovery time i f = 10.6a, di/dt = 100a/ p s 35 53 ns q rr reverse recovery charge 42 63 nc notes: 1: r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2: pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. a. 50c/w when mounted on a 1 in 2 pad of 2 oz copper b. 125c/w when mounted on a minimum pad of 2 oz copper
FDMS5672 n-channel ultrafet trench ? mosfet FDMS5672 rev.c1 www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 20 40 60 80 100 120 v gs = 6v v gs = 8v v gs = 5v v gs = 7v v gs = 10v pulse duration = 80 p s duty cycle = 0.5%max i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 20406080100120 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 5v v gs = 10v v gs = 7v v gs = 8v v gs = 6v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 10.6a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 5 10 15 20 25 30 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d =10.6a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 23456 0 10 20 30 40 50 60 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS5672 n-channel ultrafet trench ? mosfet FDMS5672 rev.c1 www.fairchildsemi.com 4 figure 7. 0 5 10 15 20 25 30 35 0 2 4 6 8 10 v dd = 40v v dd = 20v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 30v i d = 10.6a gate charge characteristics figure 8. 0.1 1 10 100 1000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 4000 60 40 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 20 500 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 10 20 30 40 50 60 70 limited by package r t jc = 1.6 o c/w v gs = 6v v gs = 10v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.1 1 10 100 1e-3 0.01 0.1 1 10 1s dc 10s 100ms 10ms 1ms 100us operation in this area may be limited by r ds(on) single pulse t j = max rated t a = 25 o c i d , drain current (a) v ds , drain to source voltage (v) 50 500 figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 1000 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 0.6 2000 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ---------------------- - s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDMS5672 n-channel ultrafet trench ? mosfet FDMS5672 rev.c1 www.fairchildsemi.com 5 figure 13. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 5e-3 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDMS5672 n-channel ultrafet trench ? mosfet FDMS5672 rev.c1 www.fairchildsemi.com 6
FDMS5672 rev. c1 www.fairchildsemi.com 7 FDMS5672 n-channel uitrafet trench ? mosfet trademarks the following are registered and unregister ed trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make c hanges without further notice to any products herein to improve reliability, function or design. fairchil d does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these specific ations do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warrant y therein, which c overs these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably exp ected to result in signi ficant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perfor m can be reasonab ly expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datash eet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor re serves the right to make changes at any time without notice in order to improve design. no identification needed full production this data sheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed fo r reference information only. rev. i22
|
